STP9527 p channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP9527 2007. v1 suscription STP9527 is the pchannel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos trench te chnology. this high density process is especially tailored to minimize onstate resistance. these devices are particularly suited for low voltage application, no teook power management ane ther battery powered circuits where highside witching. pin configuration sop-8 part marking sop-8 ordering information part number package part marking STP9527 sop8 STP9527 process code : a ~ z ; a ~ z feature 40v/10.0a, r ds(on) = 32m (typ.) @v gs =10v 40v/8.0a, r ds(on) = 38m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sop8 package design
STP9527 p channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP9527 2007. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage v dss 40 v gatesource voltage v gss 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d 10.0 8.0 a pulsed drain current i dm 30 a continuous source current (diode conduction) i s 2.3 a power dissipation t a =25 t a =70 p d 2.8 1.8 w operation junction temperature t j 55/150 storgae temperature range t stg 55/150 thermal resistancejunction to ambient r ja 70 /w
STP9527 p channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP9527 2007. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,i d =250ua 40 v gate threshold voltage v gs(th) v ds =v gs ,i d =250 ua 0.8 2.5 v gate leakage current i gss v ds =0v,v gs = 20v 100 na v ds =36v,v gs =0v 1 zero gate voltage drain current i dss v ds =36v,v gs =0v t j =85 10 ua onstate drain current i d(on) v ds= 5v,v gs =4.5 10 a drainsource onresistance r ds(on) v gs =10v, i d =10a v gs =4.5v, i d =8a 0.032 0.038 0.040 0.050 forward tran conductance g fs v ds =15v,i d =5.7a 13 s diode forward voltage v sd i s =2.3a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 13 20 gatesource charge q gs 4.5 gatedrain charge q gd v ds =20v,v gs =4.5 i d 5.0a 6.5 nc input capacitance ciss 1100 output capacitance coss 145 reverse transfercapacitance crss v ds =20v,vgs=0v f=1mhz 115 pf 40 80 turnon time t d(on) tr 55 100 30 60 turnoff time t d(off) tf v dd =20v,r l =4 i d =5.0a,v gen =4.5 r g =1 12 20 ns
STP9527 p channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP9527 2007. v1 typical characterictics
STP9527 p channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP9527 2007. v1 typical characterictics
STP9527 p channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP9527 2007. v1 typical characterictics
STP9527 p channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP9527 2007. v1 sop-8 package outline
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